Q1. Draw the graph of current density versus electrical field in an intrinsic semiconductor and describe the mechanisms governing the three regions of this plot. Describe the construction of a photodiode with appropriate diagram. What is the minimum frequency (in Hertz) of the photons detectable by a photodiode made of a semiconductor with 2.5 eV bandgap?
- (a)) Draw the graph of current density versus electrical field in an intrinsic semiconductor and describe the mechanisms governing the three regions of this plot. (250 words)
- (b)) Describe the construction of a photodiode with appropriate diagram. What is the minimum frequency (in Hertz) of the photons detectable by a photodiode made of a semiconductor with 2.5 eV bandgap? (250 words)
- Current density vs. E-field in intrinsic semiconductors has Ohmic, Velocity Saturation, and Breakdown regions.
- Ohmic region: J ∝ E due to constant mobility and low energy scattering.
- Velocity Saturation region: Drift velocity saturates due to increased phonon scattering, reducing mobility.
- Breakdown region: Impact ionization generates electron-hole pairs, causing a rapid current increase.
Answer: The behavior of current density versus electrical field in an intrinsic semiconductor reveals distinct mechanisms across different regions. Simultaneously, photodiodes, crucial optoelectronic devices, leverage semiconductor properties for light detection. Their construction involves a specially designed p-n junction, and their ability to detect photons is directly linked to the semiconductor's bandgap energy, determining the minimum frequency of light that can generate electron-hole pairs.